SUP40012EL N-Channel Power MOSFET — 40V / 150A, TO-263, 2.5mΩ Ultra-Low Rds(on)

SUP40012EL N-Channel Power MOSFET — 40V / 150A, TO-263 (D2PAK)

The SUP40012EL is a high-current N-channel power MOSFET rated at 40V / 150A with an ultra-low on-resistance of just 2.5mΩ @ Vgs=10V — one of the lowest Rds(on) values available in a TO-263 (D2PAK) surface-mount package. Designed for high-efficiency synchronous rectification, DC-DC buck converters, and motor drive applications where minimizing conduction losses at very high currents is critical. At 50A continuous, conduction loss is only 6.25W — enabling compact, high-efficiency designs without large heatsinks.

Key Specifications

Parameter	Value
Channel Type	N-Channel
Drain-Source Voltage (Vds)	40V
Continuous Drain Current (Id)	150A @ Tc=25°C
Pulsed Drain Current (Idm)	600A
On-Resistance (Rds(on))	2.5mΩ @ Vgs=10V
Gate Threshold Voltage (Vgs(th))	2.0V – 4.0V
Total Power Dissipation	375W @ Tc=25°C
Package	TO-263 / D2PAK (surface mount)
Operating Temperature	-55°C to +175°C
Manufacturer	Vishay Siliconix
RoHS Compliant	Yes

Why Choose the SUP40012EL?

• 2.5mΩ Rds(on) — at 100A, only 25W conduction loss; enables high-efficiency designs that would overheat with standard MOSFETs
• 150A continuous current — handles the highest-current motor drives and power converters in a single device
• TO-263 (D2PAK) SMD package — PCB-mount with exposed pad for direct thermal dissipation through the board; no separate heatsink clip required
• 40V Vds — suitable for 12V and 24V systems with ample transient headroom

Typical Applications

• Synchronous rectifier in high-current DC-DC buck converters
• High-current motor drive (low-side switch)
• Battery management system (BMS) high-current discharge switch
• Server and telecom power supply rectification
• High-current OR-ing and load sharing circuits
• Electric vehicle auxiliary power switching

Frequently Asked Questions

Q: Does this require a gate driver?

Yes — the SUP40012EL has a standard gate threshold (2–4V) and significant gate charge. For switching frequencies above a few kHz, use a dedicated gate driver IC (e.g. UCC27524, TC4427) to ensure fast turn-on/off and minimize switching losses.

Q: How do I heatsink a TO-263 package?

The TO-263 exposed metal tab is soldered directly to a large copper pour on the PCB. Use a 4-layer board with thermal vias to the inner copper layers, or a 2-layer board with a large bottom copper pour. For very high currents (>80A), an external heatsink clip or forced air cooling may be required.

Package Contents

• 1× SUP40012EL N-Channel Power MOSFET (TO-263 / D2PAK)

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