SI2302DS SOT-23 N-Channel MOSFET 20V 2.5A Logic-Level SMD (10-Pack)

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SI2302DS SOT-23 N-Channel MOSFET — 20V / 2.5A Logic-Level SMD (10-Pack)

The SI2302DS is a logic-level N-Channel enhancement-mode MOSFET from Vishay in a compact SOT-23 surface-mount package, rated at 20V / 2.5A with an RDS(on) of 85mΩ. Its low gate threshold voltage of 0.4V–1.0V ensures full enhancement at 3.3V and 5V MCU GPIO levels — ideal for low-side load switching, LED driving, and power management in space-constrained designs.

Key Specifications

Parameter	Value
Part Number	SI2302DS
Package	SOT-23 (SMD)
Channel Type	N-Channel
V(DS) Max	20V
I(D) Continuous	2.5A @ 25°C
RDS(on) Max	85mΩ @ VGS=4.5V
VGS(th)	0.4V – 1.0V
VGS Max	±8V
Qg (Total Gate Charge)	3.5nC typical
Quantity	10 pieces

Why Choose SI2302DS?

Logic-Level Gate — VGS(th) 0.4–1.0V; fully enhanced at 3.3V GPIO without gate driver
Ultra-Low Gate Charge — 3.5nC enables fast switching with minimal MCU GPIO current
SOT-23 Package — Minimal PCB footprint for dense SMD designs
2.5A Current Rating — Drives LEDs, small motors, relays, and sensor power rails
Pack of 10 — Ideal for prototyping and small production runs

Typical Applications

3.3V/5V MCU GPIO low-side load switching (LED arrays, relays, sensors)
Battery-powered device power rail enable/disable
PWM LED dimming from MCU GPIO
Motor soft-start and enable control
USB power switch and current limiting
Level shifting from 3.3V to 5V logic

FAQ

Q: Can SI2302DS be driven directly from ESP32 3.3V GPIO?
A: Yes — VGS(th) max is 1.0V, so 3.3V gate drive fully enhances the device. RDS(on) at VGS=2.5V is slightly higher than at 4.5V but still adequate for most loads.

Q: What’s the difference between SI2302DS and 2N7002?
A: SI2302DS has lower RDS(on) (85mΩ vs 7.5Ω) and higher current (2.5A vs 115mA). SI2302DS is the better choice for any load above a few milliamps.