{"product_id":"hgtg30n60a4d-n-channel-igbt-to247-600v-30a-ultra-fast-high-voltage","title":"HGTG30N60A4D N-Channel IGBT — TO-247, 600V 30A, Ultra-Fast, High-Voltage Switching","description":"\u003ch2\u003eHGTG30N60A4D N-Channel IGBT — TO-247, 600V, 30A, Ultra-Fast Switching\u003c\/h2\u003e\u003cp\u003eThe HGTG30N60A4D is an ultra-fast N-channel insulated gate bipolar transistor (IGBT) in a TO-247 package, rated at 600V collector-emitter voltage and 30A continuous collector current. Designed for high-frequency switching applications, it combines the low saturation voltage of a bipolar transistor with the voltage-controlled gate of a MOSFET. It is widely used in induction heaters, resonant inverters, UPS systems, motor drives, and welding inverters where 600V high-current switching at frequencies above 20kHz is required.\u003c\/p\u003e\u003ch3\u003eKey Specifications\u003c\/h3\u003e\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eValue\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePackage\u003c\/td\u003e\n\u003ctd\u003eTO-247 (through-hole)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCollector-Emitter Voltage (VCES)\u003c\/td\u003e\n\u003ctd\u003e600V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous Collector Current (IC)\u003c\/td\u003e\n\u003ctd\u003e30A (TC=25°C)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eGate-Emitter Voltage (VGE)\u003c\/td\u003e\n\u003ctd\u003e±20V max\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSaturation Voltage (VCE(sat))\u003c\/td\u003e\n\u003ctd\u003e2.35V typ. (IC=30A, VGE=15V)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTurn-Off Time (toff)\u003c\/td\u003e\n\u003ctd\u003eUltra-fast (optimized for \u0026gt;20kHz)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eTotal Gate Charge (Qg)\u003c\/td\u003e\n\u003ctd\u003e~100nC\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating Temperature\u003c\/td\u003e\n\u003ctd\u003e-55°C to +150°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\u003ch3\u003eIGBT vs Power MOSFET — When to Use IGBT?\u003c\/h3\u003e\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eFeature\u003c\/th\u003e\n\u003cth\u003eIGBT (HGTG30N60A4D)\u003c\/th\u003e\n\u003cth\u003ePower MOSFET (e.g., IRF3710S)\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eVoltage rating\u003c\/td\u003e\n\u003ctd\u003e600V (high voltage)\u003c\/td\u003e\n\u003ctd\u003eTypically ≤200V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eConduction loss\u003c\/td\u003e\n\u003ctd\u003eLower at high current (VCE(sat))\u003c\/td\u003e\n\u003ctd\u003eHigher at high current (I²×RDS(on))\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSwitching speed\u003c\/td\u003e\n\u003ctd\u003eSlower (tail current)\u003c\/td\u003e\n\u003ctd\u003eFaster (no minority carriers)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eBest frequency\u003c\/td\u003e\n\u003ctd\u003eUp to ~100kHz\u003c\/td\u003e\n\u003ctd\u003eUp to several MHz\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eBest for\u003c\/td\u003e\n\u003ctd\u003e600V+ high-current applications\u003c\/td\u003e\n\u003ctd\u003eLow-voltage, high-frequency switching\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\u003ch3\u003eWhy Choose HGTG30N60A4D?\u003c\/h3\u003e\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eUltra-fast switching\u003c\/strong\u003e — optimized for induction heater and resonant inverter frequencies (20–100kHz)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003e600V \/ 30A rating\u003c\/strong\u003e — handles mains-voltage switching with margin for voltage spikes\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eTO-247 package\u003c\/strong\u003e — large tab for heatsink mounting, handles high power dissipation\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eVoltage-controlled gate\u003c\/strong\u003e — driven by standard IGBT gate driver ICs (IR2110, HCPL-314J)\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eOnsemi \/ Fairchild heritage\u003c\/strong\u003e — industry-standard part with comprehensive datasheet and application notes\u003c\/li\u003e\n\u003c\/ul\u003e\u003ch3\u003eCompatible With \/ Common Use Cases\u003c\/h3\u003e\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eInduction heater\u003c\/strong\u003e: ZVS (zero-voltage switching) induction heater circuit, 12–48V supply, 20–50kHz\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eResonant inverter\u003c\/strong\u003e: LLC or series resonant converter for high-efficiency power conversion\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eUPS inverter\u003c\/strong\u003e: Single-phase or three-phase UPS output stage, 50\/60Hz to 20kHz PWM\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eWelding inverter\u003c\/strong\u003e: IGBT H-bridge for inverter welder (MMA\/TIG), 20–60kHz switching\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eMotor drive\u003c\/strong\u003e: 3-phase BLDC motor inverter for 230V AC motor drives\u003c\/li\u003e\n\u003c\/ul\u003e\u003ch3\u003eFrequently Asked Questions\u003c\/h3\u003e\u003cp\u003e\u003cstrong\u003eQ: What gate driver IC should I use with HGTG30N60A4D?\u003c\/strong\u003e\u003cbr\u003eA: Use a dedicated IGBT gate driver with ±15V gate drive (VGE=+15V for on, −15V for fast turn-off). Recommended: IR2110 (half-bridge bootstrap), HCPL-314J (isolated), 1EDC20I12AH (Infineon). Use a 10–22Ω gate resistor to control switching speed and limit EMI. Never drive the gate directly from a microcontroller GPIO.\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eQ: What heatsink do I need for HGTG30N60A4D at 30A?\u003c\/strong\u003e\u003cbr\u003eA: At 30A and VCE(sat)=2.35V, conduction loss is ~70W. Add switching losses for your frequency. A heatsink with thermal resistance ≤0.5°C\/W with thermal paste is required for full-load operation. For most applications, derate to 15–20A with a medium heatsink (1–2°C\/W) and forced air cooling.\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eQ: Can HGTG30N60A4D replace GT30J122 or GT30F124 in an induction heater?\u003c\/strong\u003e\u003cbr\u003eA: These are all 600V ultra-fast IGBTs in TO-247 with similar ratings. Verify VCE(sat), switching times, and gate charge before substituting. HGTG30N60A4D is generally compatible with ZVS induction heater circuits designed for GT30J122 or similar ultra-fast 600V IGBTs.\u003c\/p\u003e\u003ch3\u003ePackage Contents\u003c\/h3\u003e\u003cul\u003e\u003cli\u003e1× HGTG30N60A4D N-Channel IGBT (TO-247)\u003c\/li\u003e\u003c\/ul\u003e","brand":"Keszoox","offers":[{"title":"Default Title","offer_id":46991462498539,"sku":"\u003cnone\u003e","price":11.68,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0677\/1005\/8731\/files\/hgtg30n60a4d-to247-n-channel-mosfet-transistor.webp?v=1761721244","url":"https:\/\/keszoox.com\/products\/hgtg30n60a4d-n-channel-igbt-to247-600v-30a-ultra-fast-high-voltage","provider":"Keszoox","version":"1.0","type":"link"}