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NDP6020P P-Channel Power MOSFET — 20V / 24A, TO-220, Logic-Level, High-Side Switch

NDP6020P P-Channel Power MOSFET 20V / 24A, TO-220, Logic-Level, High-Side Switch

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NDP6020P P-Channel Power MOSFET — 20V / 24A, TO-220, Logic-Level

The NDP6020P is a logic-level P-channel power MOSFET rated at -20V / -24A with an on-resistance of 45mΩ @ Vgs=-10V. P-channel MOSFETs are the natural choice for high-side switching — where the load sits between the MOSFET and ground — because they turn on when the gate is pulled LOW relative to the source, eliminating the need for a bootstrap gate driver circuit required by high-side N-channel configurations. The logic-level gate threshold allows direct drive from a 5V microcontroller in 12V high-side switch applications.

Key Specifications

Parameter Value
Channel Type P-Channel
Drain-Source Voltage (Vds) -20V
Continuous Drain Current (Id) -24A @ Tc=25°C
Pulsed Drain Current (Idm) -96A
On-Resistance (Rds(on)) 45mΩ @ Vgs=-10V
Gate Threshold Voltage (Vgs(th)) -1.0V to -2.5V
Logic-Level Gate Drive Fully on @ Vgs=-4.5V
Total Power Dissipation 50W @ Tc=25°C
Package TO-220 (through-hole)
Operating Temperature -55°C to +175°C
Manufacturer ON Semiconductor (onsemi)
RoHS Compliant Yes

P-Channel vs N-Channel — When to Use Each

Configuration N-Channel P-Channel (NDP6020P)
Switch Position Low-side (between load and GND) High-side (between supply and load)
Gate Drive (turn ON) Pull gate HIGH above source Pull gate LOW below source
High-Side Drive Complexity Requires bootstrap driver ✅ Simple — pull gate to GND to turn on
Rds(on) (same die size) Lower (2–3× better) Higher
Best For Low-side, H-bridge, DC-DC High-side load switch, reverse protection

Why Choose the NDP6020P?

  • Simple high-side switching — connect source to 12V supply, drain to load; pull gate LOW to turn on — no bootstrap driver needed
  • Logic-level gate — a 5V Arduino can drive the gate via an NPN transistor or N-channel MOSFET level shifter for clean switching
  • Reverse polarity protection — P-channel MOSFETs are commonly used as ideal diodes for reverse polarity protection with near-zero voltage drop
  • 24A continuous current — handles high-current 12V loads including motors, LED strips, and solenoids

Typical Applications

  • High-side load switch for 12V systems (Arduino-controlled power switching)
  • Reverse polarity protection (ideal diode replacement)
  • P-channel high-side switch in H-bridge motor driver
  • Battery charger power path management
  • Automotive 12V accessory high-side switching
  • Power sequencing and OR-ing circuits

Frequently Asked Questions

Q: How do I drive a P-channel MOSFET from a 5V Arduino for a 12V load?

Connect the source to 12V and the load between drain and GND. To turn ON: use an NPN transistor (e.g. 2N2222) or N-channel MOSFET with its collector/drain connected to the P-MOSFET gate via a pull-up resistor to 12V. When the Arduino drives the NPN base HIGH, it pulls the P-MOSFET gate LOW (to ~0V), turning it on. A gate resistor of 100–470Ω limits gate current spikes.

Q: Why is P-channel Rds(on) higher than N-channel?

P-channel MOSFETs use holes as charge carriers, which have lower mobility than electrons (used in N-channel). This means a P-channel die must be larger to achieve the same Rds(on), resulting in higher on-resistance for the same package size. For high-efficiency designs requiring low Rds(on), use an N-channel MOSFET with a bootstrap gate driver on the high side.

Package Contents

  • 1× NDP6020P P-Channel Power MOSFET (TO-220)
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NDP6020P P-Channel Power MOSFET — 20V / 24A, TO-220, Logic-Level

The NDP6020P is a logic-level P-channel power MOSFET rated at -20V / -24A with an on-resistance of 45mΩ @ Vgs=-10V. P-channel MOSFETs are the natural choice for high-side switching — where the load sits between the MOSFET and ground — because they turn on when the gate is pulled LOW relative to the source, eliminating the need for a bootstrap gate driver circuit required by high-side N-channel configurations. The logic-level gate threshold allows direct drive from a 5V microcontroller in 12V high-side switch applications.

Key Specifications

Parameter Value
Channel Type P-Channel
Drain-Source Voltage (Vds) -20V
Continuous Drain Current (Id) -24A @ Tc=25°C
Pulsed Drain Current (Idm) -96A
On-Resistance (Rds(on)) 45mΩ @ Vgs=-10V
Gate Threshold Voltage (Vgs(th)) -1.0V to -2.5V
Logic-Level Gate Drive Fully on @ Vgs=-4.5V
Total Power Dissipation 50W @ Tc=25°C
Package TO-220 (through-hole)
Operating Temperature -55°C to +175°C
Manufacturer ON Semiconductor (onsemi)
RoHS Compliant Yes

P-Channel vs N-Channel — When to Use Each

Configuration N-Channel P-Channel (NDP6020P)
Switch Position Low-side (between load and GND) High-side (between supply and load)
Gate Drive (turn ON) Pull gate HIGH above source Pull gate LOW below source
High-Side Drive Complexity Requires bootstrap driver ✅ Simple — pull gate to GND to turn on
Rds(on) (same die size) Lower (2–3× better) Higher
Best For Low-side, H-bridge, DC-DC High-side load switch, reverse protection

Why Choose the NDP6020P?

  • Simple high-side switching — connect source to 12V supply, drain to load; pull gate LOW to turn on — no bootstrap driver needed
  • Logic-level gate — a 5V Arduino can drive the gate via an NPN transistor or N-channel MOSFET level shifter for clean switching
  • Reverse polarity protection — P-channel MOSFETs are commonly used as ideal diodes for reverse polarity protection with near-zero voltage drop
  • 24A continuous current — handles high-current 12V loads including motors, LED strips, and solenoids

Typical Applications

  • High-side load switch for 12V systems (Arduino-controlled power switching)
  • Reverse polarity protection (ideal diode replacement)
  • P-channel high-side switch in H-bridge motor driver
  • Battery charger power path management
  • Automotive 12V accessory high-side switching
  • Power sequencing and OR-ing circuits

Frequently Asked Questions

Q: How do I drive a P-channel MOSFET from a 5V Arduino for a 12V load?

Connect the source to 12V and the load between drain and GND. To turn ON: use an NPN transistor (e.g. 2N2222) or N-channel MOSFET with its collector/drain connected to the P-MOSFET gate via a pull-up resistor to 12V. When the Arduino drives the NPN base HIGH, it pulls the P-MOSFET gate LOW (to ~0V), turning it on. A gate resistor of 100–470Ω limits gate current spikes.

Q: Why is P-channel Rds(on) higher than N-channel?

P-channel MOSFETs use holes as charge carriers, which have lower mobility than electrons (used in N-channel). This means a P-channel die must be larger to achieve the same Rds(on), resulting in higher on-resistance for the same package size. For high-efficiency designs requiring low Rds(on), use an N-channel MOSFET with a bootstrap gate driver on the high side.

Package Contents

  • 1× NDP6020P P-Channel Power MOSFET (TO-220)

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