{"product_id":"si2301cds-sot23-p-channel-mosfet-20v-2-3a-logic-level-smd","title":"SI2301CDS SOT-23 P-Channel MOSFET −20V 2.3A Logic-Level SMD (10-Pack)","description":"\u003ch2\u003eSI2301CDS SOT-23 P-Channel MOSFET — −20V \/ 2.3A Logic-Level SMD (10-Pack)\u003c\/h2\u003e\u003cp\u003eThe \u003cstrong\u003eSI2301CDS\u003c\/strong\u003e is a P-Channel enhancement-mode MOSFET from Vishay in a compact \u003cstrong\u003eSOT-23\u003c\/strong\u003e surface-mount package, rated at \u003cstrong\u003e−20V \/ 2.3A\u003c\/strong\u003e with an RDS(on) of \u003cstrong\u003e120mΩ\u003c\/strong\u003e. Its low gate threshold voltage of \u003cstrong\u003e−0.4V to −1.0V\u003c\/strong\u003e enables full enhancement from 3.3V and 5V MCU logic — the P-Channel complement to the SI2302DS for high-side load switching applications.\u003c\/p\u003e\u003ch3\u003eKey Specifications\u003c\/h3\u003e\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eParameter\u003c\/th\u003e\n\u003cth\u003eValue\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePart Number\u003c\/td\u003e\n\u003ctd\u003eSI2301CDS \/ SI2301BDS\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePackage\u003c\/td\u003e\n\u003ctd\u003eSOT-23 (SMD)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eChannel Type\u003c\/td\u003e\n\u003ctd\u003eP-Channel\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eV(DS) Max\u003c\/td\u003e\n\u003ctd\u003e−20V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eI(D) Continuous\u003c\/td\u003e\n\u003ctd\u003e−2.3A @ 25°C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eRDS(on) Max\u003c\/td\u003e\n\u003ctd\u003e120mΩ @ VGS=−4.5V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eVGS(th)\u003c\/td\u003e\n\u003ctd\u003e−0.4V to −1.0V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eVGS Max\u003c\/td\u003e\n\u003ctd\u003e±8V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eQg (Total Gate Charge)\u003c\/td\u003e\n\u003ctd\u003e4.5nC typical\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eQuantity\u003c\/td\u003e\n\u003ctd\u003e10 pieces\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\u003ch3\u003eSI2301CDS vs SI2302DS — Complementary Pair\u003c\/h3\u003e\u003ctable\u003e\n\u003ctr\u003e\n\u003cth\u003eFeature\u003c\/th\u003e\n\u003cth\u003eSI2301CDS (P-Ch)\u003c\/th\u003e\n\u003cth\u003eSI2302DS (N-Ch)\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eChannel\u003c\/td\u003e\n\u003ctd\u003eP-Channel\u003c\/td\u003e\n\u003ctd\u003eN-Channel\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eV(DS)\u003c\/td\u003e\n\u003ctd\u003e−20V\u003c\/td\u003e\n\u003ctd\u003e20V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eI(D)\u003c\/td\u003e\n\u003ctd\u003e2.3A\u003c\/td\u003e\n\u003ctd\u003e2.5A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eRDS(on)\u003c\/td\u003e\n\u003ctd\u003e120mΩ\u003c\/td\u003e\n\u003ctd\u003e85mΩ\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eUse Case\u003c\/td\u003e\n\u003ctd\u003eHigh-side switch\u003c\/td\u003e\n\u003ctd\u003eLow-side switch\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/table\u003e\u003ch3\u003eWhy Choose SI2301CDS?\u003c\/h3\u003e\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eLogic-Level Gate\u003c\/strong\u003e — VGS(th) −0.4V to −1.0V; fully enhanced at VGS=−4.5V from 5V MCU\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eHigh-Side Switching\u003c\/strong\u003e — P-Channel topology enables simple high-side load switch without gate driver\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eSOT-23 Package\u003c\/strong\u003e — Minimal PCB footprint for dense SMD designs\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eComplementary to SI2302DS\u003c\/strong\u003e — Use together for H-bridge or CMOS push-pull output stage\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003ePack of 10\u003c\/strong\u003e — Ideal for prototyping and small production runs\u003c\/li\u003e\n\u003c\/ul\u003e\u003ch3\u003eTypical Applications\u003c\/h3\u003e\u003cul\u003e\n\u003cli\u003eHigh-side load switch for 3.3V\/5V\/12V DC loads\u003c\/li\u003e\n\u003cli\u003eBattery power path management (reverse polarity protection)\u003c\/li\u003e\n\u003cli\u003eCMOS push-pull output stage (with SI2302DS N-Channel)\u003c\/li\u003e\n\u003cli\u003eLi-ion battery protection high-side switch\u003c\/li\u003e\n\u003cli\u003eUSB power switch and current limiting\u003c\/li\u003e\n\u003cli\u003eLED backlight enable\/disable control\u003c\/li\u003e\n\u003c\/ul\u003e\u003ch3\u003eFAQ\u003c\/h3\u003e\u003cp\u003e\u003cstrong\u003eQ: How do I drive SI2301CDS from a 3.3V MCU for high-side switching?\u003c\/strong\u003e\u003cbr\u003eA: Connect source to VCC (e.g., 5V). Pull gate to GND via N-Channel transistor (2N7002) controlled by MCU GPIO. When N-Channel turns on, gate is pulled to GND, VGS = −5V, P-Channel turns on.\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eQ: Can SI2301CDS replace AO3401?\u003c\/strong\u003e\u003cbr\u003eA: Yes — both are SOT-23 P-Channel MOSFETs with similar ratings. SI2301CDS has slightly lower current (2.3A vs 4A) but similar VGS(th).\u003c\/p\u003e\u003ch3\u003ePackage Contents\u003c\/h3\u003e\u003cul\u003e\u003cli\u003e10× SI2301CDS SOT-23 P-Channel MOSFET\u003c\/li\u003e\u003c\/ul\u003e","brand":"Keszoox","offers":[{"title":"Default Title","offer_id":46991498739947,"sku":"\u003cnone\u003e","price":4.24,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0677\/1005\/8731\/files\/si2301cds-sot23-mosfet.webp?v=1761534265","url":"https:\/\/keszoox.com\/products\/si2301cds-sot23-p-channel-mosfet-20v-2-3a-logic-level-smd","provider":"Keszoox","version":"1.0","type":"link"}