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3PCS IRFP460PBF TO-247 500V 20A N-Channel Power MOSFET

$21.20 USD

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IRFP460PBF TO-247 500V 20A N-Channel Power MOSFET — 3pcs, Inverter & SMPS

The IRFP460PBF is an International Rectifier (Infineon) N-channel power MOSFET in TO-247 package, rated at 500V drain-source voltage and 20A continuous drain current with an RDS(on) of 0.27Ω. The TO-247 package provides excellent thermal performance with bolt-down heatsink mounting, making the IRFP460PBF suitable for high-voltage switching applications including DC-AC inverters, switch-mode power supplies (SMPS), motor drives, and induction heating circuits. Supplied as a 3-piece pack.

Technical Specifications

Parameter	Symbol	Value
Drain-Source Voltage	V_DSS	500V
Continuous Drain Current (25°C)	I_D	20A
Pulsed Drain Current	I_DM	80A
On-State Resistance	R_DS(on)	0.27Ω (max, V_GS=10V)
Gate-Source Voltage	V_GS	±20V
Gate Threshold Voltage	V_GS(th)	2.0–4.0V
Total Power Dissipation (25°C)	P_D	280W
Junction Temperature	T_J	−55°C to +175°C
Package	—	TO-247 (bolt-down, isolated tab)
Pack Quantity	—	3pcs
Certification	—	RoHS (PBF = lead-free)

Typical Applications

DC-AC Inverter: H-bridge and half-bridge switching stage for 12V/24V to 220V/110V DC-AC inverters for solar, UPS, and off-grid power systems
Switch-Mode Power Supply (SMPS): Primary switching transistor in flyback, forward, and full-bridge SMPS topologies for 300–500V bus voltage applications
Motor Drive: High-voltage motor drive for 3-phase AC induction motor and BLDC motor inverters operating from 300–400V DC bus
Induction Heating: Resonant switching transistor in ZVS induction heating circuits for metal heating and cooking applications
Electronic Ballast: High-frequency switching transistor for fluorescent lamp and HID lamp electronic ballast circuits
Active PFC: Boost converter switching transistor for active power factor correction (PFC) circuits in SMPS front-end stages

Gate Drive Requirements

Gate drive voltage: 10–15V for full enhancement (R_DS(on) at V_GS=10V)
Gate drive current: 1–2A peak for fast switching (use dedicated gate driver IC: IR2110, TC4420, UCC27524)
Gate resistor: 10–22Ω to limit switching speed and reduce EMI
Bootstrap or isolated gate drive required for high-side switch in half-bridge and H-bridge topologies

FAQ

Q: What is the difference between IRFP460 and IRFP460PBF?
A: The PBF suffix indicates lead-free (Pb-Free) solder plating on the terminals, compliant with RoHS directive. The electrical characteristics are identical to the standard IRFP460.

Q: Does the IRFP460PBF require a heatsink?
A: Yes. At rated 20A current, the IRFP460PBF dissipates up to 280W. A heatsink with thermal resistance ≤0.3°C/W is required for full-load operation. Use thermal compound between the MOSFET tab and heatsink.