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5PCS IRF3703PBF High-Current N-Channel MOSFET TO-220 210A 30V
5PCS IRF3703PBF High-Current N-Channel MOSFET TO-220 210A 30V
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IRF3703PBF N-Channel Power MOSFET — TO-220, 30V, 210A, 3.3mΩ — 5-Pack
The IRF3703PBF is an International Rectifier (Infineon) N-channel power MOSFET in TO-220 package, rated at 30V drain-source voltage (VDSS) and 210A continuous drain current (ID) at 25°C case temperature. With an ultra-low on-resistance of 3.3mΩ (Rds(on) at VGS = 10V), it is optimised for high-current, low-voltage switching applications including synchronous rectification, DC motor drives, battery management systems, and high-efficiency DC-DC converters. The PBF suffix indicates lead-free (RoHS-compliant) construction.
Technical Specifications
| Parameter | Value |
|---|---|
| Part Number | IRF3703PBF |
| Manufacturer | International Rectifier / Infineon |
| Package | TO-220 (through-hole, tab mount) |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDSS) | 30V |
| Continuous Drain Current (ID) | 210A @ TC = 25°C |
| Pulsed Drain Current (IDM) | 840A |
| On-Resistance (Rds(on)) | 3.3mΩ @ VGS = 10V, ID = 75A |
| Gate Threshold Voltage (VGS(th)) | 2.0V – 4.0V |
| Gate-Source Voltage (VGS) | ±20V max |
| Total Gate Charge (Qg) | 170nC (typical) |
| Rise Time (tr) | 130ns (typical) |
| Fall Time (tf) | 96ns (typical) |
| Power Dissipation (PD) | 200W @ TC = 25°C |
| Operating Temperature (TJ) | −55°C to +175°C |
| Body Diode Forward Voltage (VSD) | 1.3V (typical) |
| RoHS | Yes (PBF = lead-free) |
Typical Applications
- Synchronous Rectification: Low-side synchronous rectifier in DC-DC buck converters (12V’3.3V, 12V‘1.8V) for server power supplies and VRM modules, replacing Schottky diodes for higher efficiency
- High-Current DC Motor Drives: H-bridge and half-bridge motor driver circuits for DC motors up to 30V / 100A+ in electric vehicles, forklifts, and industrial automation
- Battery Management Systems (BMS): High-current discharge MOSFET in 24V Li-ion and LiFePO4 BMS for power tools, e-bikes, and energy storage systems
- OR-ing & Load Switching: High-current load switch and OR-ing diode replacement in redundant power supply systems
- Welding Machine Control: Primary switching element in inverter-based MIG and MMA welding machines
- Power Distribution Units: High-current switch for 12V–24V power distribution in automotive and industrial PDUs
Gate Drive Requirements
- Fully enhanced at VGS = 10V — use a gate driver IC (e.g., IR2104, TC4420, UCC27524) for fast switching
- Logic-level enhancement begins at VGS ≈ 4V — not recommended for direct 3.3V logic drive without a gate driver
- Total gate charge 170nC — gate driver must supply sufficient peak current for target switching frequency
- Add a gate resistor (10–22Ω) in series with the gate to control dV/dt and suppress ringing
FAQ
Q: What is the difference between IRF3703 and IRF3703PBF?
A: The PBF suffix indicates lead-free (Pb-free) solder plating on the leads, compliant with RoHS Directive 2011/65/EU. Electrically, the IRF3703 and IRF3703PBF are identical.
Q: Can I use the IRF3703PBF for 24V battery systems?
A: Yes. The 30V VDSS rating provides adequate margin for 24V nominal systems (fully charged 7S Li-ion = 29.4V). For 24V LiFePO4 (8S, fully charged = 29.2V), the 30V rating is at the limit — consider a 40V-rated MOSFET (e.g., IRF3710) for additional safety margin.
Q: Does this MOSFET require a heatsink?
A: At high currents (>50A), a heatsink is required. The TO-220 tab is electrically connected to the drain. Use an insulating pad (e.g., TO-220 mica or silicone pad) if the heatsink is grounded.
Package Contents
- 5 × IRF3703PBF N-Channel Power MOSFET TO-220
