BS170 N-Channel MOSFET Transistor — TO-92, 60V, 500mA, Logic-Level Gate (5-Pack)

BS170 N-Channel MOSFET — TO-92, 60V, 500mA, Logic-Level

The BS170 is a small-signal N-channel enhancement-mode MOSFET in a TO-92 package. With a 60V drain-source voltage rating, 500mA continuous drain current, and a gate threshold voltage of 0.8–2.4V, it can be driven directly from 3.3V and 5V logic outputs without a gate driver IC. It is widely used for low-power switching, LED control, and signal-level switching in microcontroller-based designs.

Key Specifications

Parameter	Value
Type	N-Channel Enhancement MOSFET
Package	TO-92
Drain-Source Voltage (VDS)	60V
Continuous Drain Current (ID)	500mA
Gate Threshold Voltage (VGS(th))	0.8–2.4V
On-Resistance (RDS(on))	5Ω max (VGS=5V)
Gate-Source Voltage (VGS)	±20V max
Quantity	5 pieces

Why Choose BS170?

• Logic-level gate drive — turns on fully with 3.3V or 5V MCU output, no gate driver needed
• TO-92 through-hole — easy to prototype on breadboard or perfboard
• Low gate threshold — ideal for battery-powered and low-voltage designs
• 60V rating — suitable for switching inductive loads up to 60V
• 5-pack value — enough for multiple projects and prototyping

Typical Applications

• LED and small lamp switching from MCU GPIO
• Low-side switch for relay coil drive
• Motor speed control (low-power DC motors)
• Signal-level analog switching
• Battery charger control circuits

Package Contents

• 5× BS170 N-Channel MOSFET (TO-92)

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