Keszoox
IR2104S Half-Bridge MOSFET / IGBT Gate Driver — SOP-8, 600V, Built-in Deadtime (5-Pack)
IR2104S Half-Bridge MOSFET / IGBT Gate Driver SOP-8, 600V, Built-in Deadtime (5-Pack)
Couldn't load pickup availability
IR2104S Half-Bridge MOSFET / IGBT Gate Driver — SOP-8, 600V, Built-in Deadtime (5-Pack)
The IR2104S is a high-voltage half-bridge gate driver IC from Infineon (formerly International Rectifier) in a SOP-8 SMD package. It drives both the high-side and low-side switches of a half-bridge topology from a single input signal, with a built-in 520ns deadtime to prevent shoot-through. With 600V high-side bootstrap operation, 130mA source / 270mA sink gate drive, and an SD (shutdown) pin for hardware disable, it is the standard gate driver for BLDC motor drives, DC-DC converters, and inverter H-bridge circuits.
Key Specifications
| Parameter | Value |
|---|---|
| Package | SOP-8 (SMD) |
| High-Side Voltage (offset) | Up to 600V |
| Gate Drive Current | 130mA source / 270mA sink |
| Built-in Deadtime | 520ns (prevents shoot-through) |
| Input Logic | Single PWM input (IN) + SD shutdown |
| Bootstrap Supply | External bootstrap diode + capacitor |
| Propagation Delay | ~680ns (HO), ~150ns (LO) |
| Operating Temperature | -40°C to +125°C |
| Quantity | 5 pieces |
IR2104S vs IR2110 vs IR2101 — Which Gate Driver?
| Feature | IR2104S | IR2110 | IR2101 |
|---|---|---|---|
| Inputs | 1 (IN + SD) | 2 (HIN + LIN, independent) | 2 (HIN + LIN, independent) |
| Built-in deadtime | Yes (520ns) | No (external) | No (external) |
| Gate drive current | 130/270mA | 200/420mA | 130/270mA |
| Package | SOP-8 (SMD) | DIP-14 / SOP-14 | SOP-8 |
| Best for | Simple half-bridge, BLDC, buck converter | Full H-bridge, independent HO/LO control | Half-bridge, independent control |
Why Choose IR2104S?
- Built-in 520ns deadtime — eliminates shoot-through without external timing circuits, simplifies design
- Single PWM input — one signal controls both HO and LO with automatic complementary switching
- 600V bootstrap operation — drives high-side MOSFET/IGBT up to 600V above ground
- SD shutdown pin — hardware disable for fault protection, connects to MCU fault output or comparator
- SOP-8 SMD — compact footprint for high-density PCB designs
Compatible With / Common Use Cases
- BLDC motor drive: 3× IR2104S for 3-phase inverter (one per phase half-bridge), with IRF540N or IRLZ44N MOSFETs
- Synchronous buck converter: High-side + low-side MOSFET drive for CPU/GPU power stage
- H-bridge DC motor control: 2× IR2104S for full H-bridge (one per half-bridge leg)
- Induction heater: Half-bridge resonant inverter with IGBT (HGTG30N60A4D) at 20–50kHz
- UPS inverter: Half-bridge output stage for single-phase UPS
Frequently Asked Questions
Q: What bootstrap capacitor and diode do I need for IR2104S?
A: Use a 100nF ceramic capacitor (C0G/X7R, rated ≥VCC+20V) between VB and VS pins for the bootstrap supply. Use a fast recovery diode (1N4148, UF4007, or dedicated bootstrap diode like STTH1L06) from VCC to VB. For higher gate charge MOSFETs (>50nC), increase bootstrap capacitor to 220–470nF.
Q: Can IR2104S drive IGBTs as well as MOSFETs?
A: Yes — IR2104S drives both N-channel MOSFETs and N-channel IGBTs. For IGBTs, use +15V gate drive (VCC=15V) for full enhancement. The 130mA source current is sufficient for IGBTs up to ~120nC gate charge at 20kHz switching frequency. For higher gate charge or frequency, use IR2110 (200mA source).
Q: How do I connect IR2104S for a simple half-bridge motor drive?
A: Connect VCC to 15V, COM to GND, VS to the half-bridge midpoint (motor terminal). Connect HO to high-side MOSFET gate, LO to low-side MOSFET gate. Apply PWM to IN pin from MCU. Connect SD to VCC for always-enabled, or to MCU GPIO for fault shutdown. Add bootstrap diode from VCC to VB, and 100nF capacitor from VB to VS.
Package Contents
- 5× IR2104S Half-Bridge MOSFET/IGBT Gate Driver IC (SOP-8)
