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IRF3710S N-Channel MOSFET — TO-263 D2PAK SMD, 100V 57A, Logic-Level (5-Pack)
IRF3710S N-Channel MOSFET TO-263 D2PAK SMD, 100V 57A, Logic-Level (5-Pack)
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IRF3710S N-Channel Power MOSFET — TO-263 D2PAK SMD, 100V, 57A, Logic-Level (5-Pack)
The IRF3710S is a high-current N-channel enhancement-mode power MOSFET in a TO-263 (D2PAK) surface-mount package, rated at 100V and 57A continuous drain current with an ultra-low 23mΩ RDS(on). The logic-level gate threshold (2–4V) allows direct drive from 5V gate driver ICs. The D2PAK SMD package solders the drain tab directly to the PCB copper pour, providing excellent thermal dissipation without an external heatsink for most applications.
Key Specifications
| Parameter | Value |
|---|---|
| Package | TO-263 D2PAK (SMD) |
| Drain-Source Voltage (VDS) | 100V |
| Continuous Drain Current (ID) | 57A (TC=25°C) |
| On-Resistance RDS(on) | 23mΩ (VGS=10V) |
| Gate Threshold Voltage (VGS(th)) | 2–4V (logic-level) |
| Total Gate Charge (Qg) | 110nC typ. |
| Body Diode Reverse Recovery | Fast recovery |
| Operating Temperature | -55°C to +175°C |
| Quantity | 5 pieces |
Why Choose IRF3710S D2PAK over TO-220?
| Feature | IRF3710S (TO-263 D2PAK SMD) | IRF3710 (TO-220 Through-Hole) |
|---|---|---|
| Mounting | SMD — soldered to PCB | Through-hole — requires heatsink |
| Thermal Path | Tab to PCB copper pour (low Rth) | Tab to external heatsink |
| PCB Density | Higher — no heatsink clearance needed | Lower — heatsink takes space |
| Best For | High-current SMD PCB designs | Prototyping and through-hole boards |
Why Choose IRF3710S?
- 57A / 100V rating — handles high-current motor and power conversion loads with margin
- Ultra-low 23mΩ RDS(on) — minimal conduction loss, less heat at high currents
- D2PAK tab-to-PCB thermal path — excellent heat dissipation without external heatsink for most applications
- Logic-level gate (2–4V) — compatible with 5V gate driver ICs (IR2110, TC4420)
- 5-pack value — enough for a complete H-bridge (4 FETs) plus one spare
Compatible With / Common Use Cases
- BLDC motor drive: 3-phase inverter bridge with IR2110 or DRV8301 gate driver (6× IRF3710S)
- Synchronous buck converter: High-side + low-side switch for CPU/GPU power stage
- H-bridge DC motor control: High-power bidirectional motor drive (4× IRF3710S per bridge)
- Synchronous rectification: Secondary-side rectifier in high-efficiency DC-DC converters
- Battery management: High-current charge/discharge switch in BMS circuits
Frequently Asked Questions
Q: What gate driver IC should I use with IRF3710S at high switching frequencies?
A: With 110nC total gate charge, use a dedicated gate driver for frequencies above 10kHz. Recommended: IR2110 (half-bridge, bootstrap), TC4420/TC4421 (single, 9A peak), UCC27524 (dual, 5A peak). Use a 10–22Ω gate resistor to limit ringing and EMI.
Q: How much copper pour area do I need under the D2PAK tab for adequate cooling?
A: As a guideline, a 25×25mm copper pour (2oz copper) with thermal vias to the bottom layer can dissipate approximately 3–5W without forced air. For higher power, add more copper area, thermal vias, or a heatsink clip. Always calculate junction temperature based on actual power dissipation: Tj = Ta + (Pd × Rth(j-a)).
Q: Can I use IRF3710S as a direct replacement for IRF3710 (TO-220) in an existing PCB?
A: Electrically yes — identical specifications. You need to adapt the PCB footprint from TO-220 through-hole to TO-263 D2PAK SMD. The D2PAK tab (drain) must be soldered to the PCB copper pour for proper thermal management — do not leave it floating.
Package Contents
- 5× IRF3710S N-Channel Power MOSFET (TO-263 D2PAK SMD)
