FQP27P06 P-Channel Power MOSFET — 60V / 27A, TO-220, High-Side Switch
FQP27P06 P-Channel Power MOSFET — 60V / 27A, TO-220, High-Side Switch
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FQP27P06 P-Channel Power MOSFET — 60V / 27A, TO-220
The FQP27P06 is a robust P-channel power MOSFET from Fairchild (now onsemi) rated at -60V / -27A with an on-resistance of 70mΩ @ Vgs=-10V. Its 60V drain-source rating makes it the preferred P-channel choice for 24V and 48V high-side switching applications where the NDP6020P’s 20V rating is insufficient. Like all P-channel MOSFETs, it turns on by pulling the gate LOW relative to the source — enabling simple high-side load switching without the bootstrap gate driver circuits required by N-channel high-side configurations.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Type | P-Channel |
| Drain-Source Voltage (Vds) | -60V |
| Continuous Drain Current (Id) | -27A @ Tc=25°C |
| Pulsed Drain Current (Idm) | -108A |
| On-Resistance (Rds(on)) | 70mΩ @ Vgs=-10V |
| Gate Threshold Voltage (Vgs(th)) | -2.0V to -4.0V |
| Total Power Dissipation | 100W @ Tc=25°C |
| Gate-Source Voltage (Vgs) | ±20V max |
| Package | TO-220 (through-hole) |
| Operating Temperature | -55°C to +175°C |
| Manufacturer | Fairchild / ON Semiconductor |
| RoHS Compliant | Yes |
FQP27P06 vs NDP6020P — Which P-Channel MOSFET?
| Parameter | NDP6020P | FQP27P06 |
|---|---|---|
| Max Vds | -20V | -60V |
| Max Id | -24A | -27A |
| Rds(on) | 45mΩ | 70mΩ |
| Logic-Level Gate | ✅ Yes (4.5V) | ⚠️ Partial (10V recommended) |
| Best For | 12V systems, MCU direct drive | 24V–48V systems |
Why Choose the FQP27P06?
- 60V Vds — handles 24V and 48V supply rails with safe transient headroom; the NDP6020P’s 20V rating is insufficient for these voltages
- Simple high-side switching — source to supply, drain to load; pull gate to GND to turn on — no bootstrap driver required
- 27A continuous current — suitable for 24V motor drives, solenoids, and high-current load switching
- Reverse polarity protection — ideal for 24V/48V battery systems requiring reverse polarity protection with low voltage drop
Typical Applications
- 24V / 48V high-side load switch
- Reverse polarity protection for 24V battery systems
- P-channel high-side switch in 24V H-bridge motor driver
- Solar charge controller power path switching
- Industrial 24V PLC output load switching
- Power sequencing and OR-ing for 24V–48V systems
Frequently Asked Questions
Q: Is the FQP27P06 logic-level compatible?
Not fully. The gate threshold is -2V to -4V, and Rds(on) is specified at Vgs=-10V. For a 24V system, you can drive the gate with an NPN transistor pulling it to GND (Vgs = -24V — within the ±20V Vgs limit). For a 5V MCU driving a 24V high-side switch, use an NPN transistor (2N2222, BC547) with a pull-up resistor to 24V on the gate.
Q: Can I use this for reverse polarity protection?
Yes — connect source to the positive supply input, drain to the circuit, and tie gate to GND. When polarity is correct, Vgs is negative (gate at 0V, source at +24V) and the MOSFET turns on with very low Rds(on). If polarity is reversed, Vgs = 0V and the MOSFET stays off, protecting the circuit. This “ideal diode” configuration has far lower voltage drop than a Schottky diode at high currents.
Package Contents
- 1× FQP27P06 P-Channel Power MOSFET (TO-220)
